Techniques for manipulation of 2D materials and the creation of new devices

Exciting collaboration leads to fast, scalable processing of 2-D materials

The ability to manipulate 2-D materials at the wafer scale is an important step on the path to industrialisable production of 2-D optoeletronics and nanoelectronic devices. A breakthrough reported in Science has been made by an international partnership demonstrating a novel technique that allows for waferscale separation of 2-D materials from their growth substrate in a few minutes, permitting fast fabrication cylcles lasting less than an hour. A second report, in Nature Materials, explores the feasibility of remote epitaxy for growth of arbitrary materials on 2-D layers. In this partnerhip, UMI GT-CNRS  contributed its expertise in production of 2-D h-BN materials.

Collaborators include GT-CNRS UMI-2958 researchers, MIT, Sun Yat-Sen University, the University of Virginia, the University of Texas at Dallas, the U.S. Naval Research Laboratory, and Ohio State University and Yonsei University in South Korea.

The recent research results have been highlighted by CNRS (french language):  

Des techniques pour manipuler des matériaux 2D et créer de nouveaux composants

For those interested in English language write-ups in the news, please try the following links.

Route to flexible electronics made from exotic materials

Researchers quickly harvest 2-D materials, bringing them closer to commercialization


  1. Jaewoo Shim, Sang-Hoon Bae, Wei Kong, Doyoon Lee, Kuan Qiao, Daniel Nezich, Yong Ju Park, Ruike Zhao, Suresh Sundaram, Xin Li, Hanwool Yeon, Chanyeol Choi, Hyun Kum, Ruoyu Yue, Guanyu Zhou, Yunbo Ou, Kyusang Lee, Jagadeesh Moodera, Xuanhe Zhao, Jong-Hyun Ahn, Christopher Hinkle, Abdallah Ougazzaden, Jeehwan Kim. Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materialsScience, 2018; eaat8126 DOI: 10.1126/science.aat8126
  2. Wei Kong, Huashan Li, Kuan Qiao, Yunjo Kim, Kyusang Lee, Yifan Nie, Doyoon Lee, Tom Osadchy, Richard J Molnar, D. Kurt Gaskill, Rachael L. Myers-Ward, Kevin M. Daniels, Yuewei Zhang, Suresh Sundram, Yang Yu, Sang-hoon Bae, Siddharth Rajan, Yang Shao-Horn, Kyeongjae Cho, Abdallah Ougazzaden, Jeffrey C. Grossman, Jeehwan Kim. Polarity governs atomic interaction through two-dimensional materialsNature Materials, 2018; DOI: 10.1038/s41563-018-0176-4



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  • h-BN / MoS2 2-D Heterostructure